By Topic

Very small critical current spreads in Nb/Al-AlOx/Nb integrated circuits using low-temperature and low-stress ECR PECVD silicon oxide films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Xiaofan Meng ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Bhat, A. ; Van Duzer, T.

We have developed a new Nb/Al-AlOx/Nb IC process with very small critical current spread. Low-temperature and low-stress ECR (Electron Cyclotron Resonance) PECVD (Plasma Enhanced Chemical Vapor Deposition) silicon oxide films have been used in the Nb IC process for all dielectric insulating layers to replace e-beam evaporated silicon monooxide films and RF reactive sputtered silicon oxide. Since ECR PECVD silicon oxide films have superiority in quality over e-beam evaporated silicon monooxide films and extremely low damage to underlayers compared to sputtered films, our Nb/Al-AlOx/Nb IC quality and yield have been improved greatly. The critical current spreads (maximum to minimum) are less than 1%(/spl sigma/<0.2%) on chip and less than 4%(/spl sigma/<0.7%) cross a four-inch wafer for 5 /spl mu/m/spl times/5 /spl mu/m junctions. Even for high critical current density (/spl sim/10 kA/cm/sup 2/) small junctions (1.5 /spl mu/m x 1.5 /spl mu/m) the on-chip spread is only about 4%(/spl sigma/<0.7%). High quality Nb/Al-AlOx/Nb ICs have been fabricated and demonstrated.

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:9 ,  Issue: 2 )