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Power MOSFET technology has to be improved significantly in order to address the needs of very low voltage power conversion applications such as that powers the future microprocessor. Detailed studies by the author indicate that device technology that is suitable for this type of application is not the conventional vertical power MOSFET technology; instead, a lateral power MOSFET technology based on the VLSI technology is more suitable. In this letter, we report for the first time the experimental result of a 6-m/spl Omega/, 43 /spl mu//spl Omega/-cm/sup 2/ lateral power MOSFET based on 0.35-/spl mu/m VLSI design rule. With a gate-charge of only about 3 nC, in terms of on-resistance gate-charge product, these results are the best ever reported for sub-20-V power MOSFET.