By Topic

Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Sarcona, G.T. ; Aspect Technol., Sunnyvale, CA, USA ; Stewart, M. ; Hatalis, M.K.

Polysilicon thin-film transistors (TFTs) with island thickness of 20 and 70 nm were fabricated with self-aligned cobalt and nickel silicide contacts to the source and drain. The silicide contacts are shown to reduce the series resistance, which limits the on-current of the device, thus significantly increasing the effective mobility in the 20-nm island devices. The mobilities of 20-nm cobalt and nickel silicided devices are similar to those with 70-nm islands, 31 versus 33 cm/sup 2//V-s, whereas the nonsilicided 20-nm devices have a mobility of only 13 cm/sup 2//V-s. The island thickness is shown to influence other device parameters affecting active matrix display driver circuit design, such as threshold voltage, leakage current, and subthreshold swing; all these parameters are improved when the island thickness is decreased.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 7 )