By Topic

Waveform relaxation for transient simulation of two-dimensional MOS devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
M. Reichelt ; Res. Lab. of Electron., MIT, Cambridge, MA, USA ; J. White ; J. Allen

The authors present experimental results demonstrating the effectiveness of waveform relaxation (WR) for solving the large, sparsely connected algebraic and differential system generated by standard spatial discretization of the two-dimensional time-dependent semiconductor device equation. The experiments demonstrate that WR converges in a uniform manner, and that there is typically some multirate behavior in a device that the WR algorithm can exploit. Speed and accuracy comparisons are made between standard direct methods, red/black Gauss-Seidel WR, and red/black overrelaxed WR. For their experiments, calculated terminal currents matched well between the methods, and overrelaxed WR was up to a factor of 3 faster than direct methods.<>

Published in:

Computer-Aided Design, 1989. ICCAD-89. Digest of Technical Papers., 1989 IEEE International Conference on

Date of Conference:

5-9 Nov. 1989