Referenced Items are not available for this document.
A fully integrated passive field-effect transistor (FET) mixer with a measured conversion loss of 7 dB and a -1 dB input compression point of -1.5 dBm at 1.9 GHz was fabricated in a standard 0.6 μm GaAs MESFET process. Zero DC-power consumption, excellent dynamic performance, and low loss make this circuit very suitable for low-power low-voltage wireless applications
Published in:
Microwave and Guided Wave Letters, IEEE
(Volume:9
,
Issue:
4
)
Date of Publication: Apr 1999
- Page(s):
- 157 - 159
- ISSN :
- 1051-8207
- INSPEC Accession Number:
- 6257094
- Digital Object Identifier :
- 10.1109/75.763246
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1999
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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