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A silicon carbide CMOS intelligent gate driver circuit with stable operation over a wide temperature range

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3 Author(s)
Jian-Song Chen ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Kornegay, K.T. ; Sei-Hyung Ryu

In this paper, we present the design and fabrication of a high-temperature silicon carbide CMOS intelligent gate driver circuit intended for high-power switching applications. Using a temperature-insensitive comparator, several functions including overvoltage and undervoltage, as well as short- and open-load detection, are provided, all of which are operational up to 300°C. These integrated circuits are ideally suited for harsh and high-temperature environments such as automotive and aircraft jet engines

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:34 ,  Issue: 2 )