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Nitride lasers on SiC substrates

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9 Author(s)
G. E. Bulman ; Cree Res. Inc., Durham, NC, USA ; K. Doverspike ; K. Haberern ; H. Dieringer
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Laser diode (LD) structures were fabricated by metal-organic chemical vapor deposition (MOCVD) from the AlN-InN-GaN system on single crystal 6H-SiC substrates. A conducting buffer layer was developed for these devices which uses an AlGaN buffer layer and provides a conduction path between SiC substrate and the active device region. Violet and blue multiple quantum well (MQW) separate confinement heterojunction (SCH) LDs were fabricated having InGaN wells and GaN barriers. The lowest pulsed operation threshold current density obtained for lasing was 7.1 kA/cm2 in a 4-well structure

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE  (Volume:2 )

Date of Conference:

3-4 Dec 1998