Referenced Items are not available for this document.
We report the effects of postgrowth rapid thermal annealing (RTA) on InGaAs-AlGaAs 980-nm lasers grown by metalorganic chemical vapor deposition (MOCVD). It was found that the threshold current density was not obviously affected by the RTA, in contrast to MBE grown lasers, and that external differential efficiency and wall-plug efficiency increased, especially at high current region
Published in:
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
(Volume:2
)
Date of Conference: 3-4 Dec 1998
- Page(s):
- 124 - 125 vol.2
- Meeting Date :
- 01 Dec 1998-04 Dec 1998
- Print ISBN:
- 0-7803-4947-4
- INSPEC Accession Number:
- 6358039
- Conference Location :
- Orlando, FL
- Digital Object Identifier :
- 10.1109/LEOS.1998.739492
- Product Type:
- Conference Publications
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