High power 980-nm lasers with external differential efficiency improved by rapid thermal annealing

We report the effects of postgrowth rapid thermal annealing (RTA) on InGaAs-AlGaAs 980-nm lasers grown by metalorganic chemical vapor deposition (MOCVD). It was found that the threshold current density was not obviously affected by the RTA, in contrast to MBE grown lasers, and that external differential efficiency and wall-plug efficiency increased, especially at high current region.