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High T0 and low threshold long wavelength lasers on InGaAs ternary substrate

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2 Author(s)
H. Ishikawa ; Fujitsu Labs. Ltd., Atsugi, Japan ; K. Nakajima

We have proposed the use of ternary InGaAs substrate for temperature insensitive and high temperature operation of 1.3 μm lasers. By the use of high In content InGaAs substrate, we can make a very deep potential strained quantum well for 1.3 μm wavelength, which suppresses the carrier overflow to improve the temperature performance. We have developed multi-component zone growth method for the ternary bulk crystals fabrication. We first grow a ternary seed crystal using a Bridgman method, then the multi-component zone growth is performed using a Bridgman grown seed crystal

Published in:

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE  (Volume:2 )

Date of Conference:

3-4 Dec 1998