High T/sub 0/ and low threshold long wavelength lasers on InGaAs ternary substrate

We have proposed the use of ternary InGaAs substrate for temperature insensitive and high temperature operation of 1.3 /spl mu/m lasers. By the use of high In content InGaAs substrate, we can make a very deep potential strained quantum well for 1.3 /spl mu/m wavelength, which suppresses the carrier overflow to improve the temperature performance. We have developed multi-component zone growth method for the ternary bulk crystals fabrication. We first grow a ternary seed crystal using a Bridgman method, then the multi-component zone growth is performed using a Bridgman grown seed crystal.