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A GaAs MOSFET with a liquid phase oxidized gate

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4 Author(s)
Wu, Jau-Yi ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Wang, Hwei-Heng ; Yeong-Her Wang ; Mau-Phon Houng

Low leakage current density (as low as 10/sup -8/ A/cm/sup 2/ at an applied voltage of 5 V) and high breakdown electrical field (larger than 4.5 MV/cm) of the liquid phase chemical-enhanced oxidized GaAs insulating layer enable application to the GaAs MOSFET. The oxide layer is found to be a composite of Ga/sub 2/O/sub 3/, As, and As/sub 2/O/sub 3/. The n-channel depletion mode GaAs MOSFET's are demonstrated and the I-V curves with complete pinch-off and saturation characteristics can be seen. A transconductance larger than 30 mS/mm can be achieved which is even better than that of MESFET's fabricated on the same wafer structure.

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Electron Device Letters, IEEE  (Volume:20 ,  Issue: 1 )