Cart (Loading....) | Create Account
Close category search window

Stability of short-channel P-channel polysilicon thin-film transistors with ECR N2O-plasma gate oxide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jin-Woo Lee ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; Nae-In Lee ; Han, Chul‐Hi

Stability of hydrogenated short-channel (/spl les/3 /spl mu/m) p-channel poly-Si TFT's with very thin (12 nm) electron cyclotron resonance N/sub 2/O plasma gate oxide is investigated. The fabricated poly-Si TFT's with gate length not less than 2 /spl mu/m show excellent stability characteristics of less than 0.1 V in the threshold voltage shift and less than 3% in the percent change of transconductance after harsh electrical stresses. In a small |V/sub G/| stress, an effective shortening of channel length is observed due to trapping of hot-electrons and the minimum leakage current is decreased. However, a large |V/sub G/| stress causes more degradation on the subthreshold slope and minimum leakage current due to trapping of hot-holes.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 1 )

Date of Publication:

Jan. 1999

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.