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Stability of short-channel P-channel polysilicon thin-film transistors with ECR N2O-plasma gate oxide

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3 Author(s)
Jin-Woo Lee ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; Nae-In Lee ; Han, Chul‐Hi

Stability of hydrogenated short-channel (/spl les/3 /spl mu/m) p-channel poly-Si TFT's with very thin (12 nm) electron cyclotron resonance N/sub 2/O plasma gate oxide is investigated. The fabricated poly-Si TFT's with gate length not less than 2 /spl mu/m show excellent stability characteristics of less than 0.1 V in the threshold voltage shift and less than 3% in the percent change of transconductance after harsh electrical stresses. In a small |V/sub G/| stress, an effective shortening of channel length is observed due to trapping of hot-electrons and the minimum leakage current is decreased. However, a large |V/sub G/| stress causes more degradation on the subthreshold slope and minimum leakage current due to trapping of hot-holes.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 1 )

Date of Publication:

Jan. 1999

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