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Thin-film transistors fabricated with poly-Si films crystallized at low temperature by microwave annealing

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4 Author(s)
Yong Woo Cboi ; Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea ; Lee, Jeong No ; Jang, Tae Woong ; Ahn, Byung Tae

Solid phase crystallization of amorphous silicon films for poly-Si thin film transistors (TFTs) has advantages of low cost and excellent uniformity, but the crystallization temperature is too high. Using a microwave annealing method, we lowered the crystallization temperature and shortened the crystallization time. The complete crystallization time at 550/spl deg/C was within 2 h. The device parameters of TFTs with the poly-Si films crystallized by microwave annealing were similar to those of TFTs with the poly-Si films crystallized by conventional furnace annealing. The new crystallization method seems attractive because of low crystallization temperature, short crystallization time, and comparable film properties.

Published in:

Electron Device Letters, IEEE  (Volume:20 ,  Issue: 1 )