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High temperature GaInAs/AlGaAs lasers with improved carrier confinement due to short period superlattice quantum well barriers

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4 Author(s)
F. Schtafer ; Tech. Phys., Wurzburg Univ., Germany ; B. Mayer ; J. P. Reithmaier ; A. Forchel

The high temperature properties of GaInAs-AlGaAs lasers were improved by using short period superlattice barriers. Record T/sub 0/-values of 320 K (up to 75/spl deg/C) and maximum operating temperatures above 240/spl deg/C could be achieved.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998