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650 nm lasers with narrow far-field divergence

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5 Author(s)
Smowton, P.M. ; Dept. of Phys. & Astron., Wales Univ., Cardiff, UK ; Summers, H.D. ; Berry, G. ; Blood, P.
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We have reduced the measured vertical far-field divergence in a 650 nm strained SQW laser from 35/spl deg/ to 21/spl deg/ (FWHM), without changing the threshold current, operating voltage or thermal impedance, by introducing additional optical mode expansion layers.

Published in:

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Date of Conference:

4-8 Oct. 1998