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A study of boron doping profile control for a low Vt device used in the advanced low power, high speed mixed-signal IC

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7 Author(s)
A. Chen ; DFAB Product Group, Texas Instrum. Inc., Dallas, TX, USA ; K. Flessner ; P. Sana ; R. Dixon
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The effects of through-gate oxide implantation on gate oxide integrity (GOI) and defect density have been investigated. It is observed that through-gate implants can reduce the off-state leakage current by 1 to 2 orders, giving the same Vt value, and can maintain much tighter Vt spread control without sacrificing the GOI and yield performance. These attractive advantages make the through-gate oxide implant process a promising candidate for high speed, low power applications

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1998. 1998 IEEE/SEMI

Date of Conference:

23-25 Sep 1998