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Pressure sensors on base of bipolar silicon strain sensitive transistors

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3 Author(s)
Babichev, G.G. ; Inst. of Semicond., Kiev, Ukraine ; Kozlovskii, S.I. ; Romanov, V.A.

Theoretical and experimental studies were made of characteristics of bipolar strain sensitive transistors (tensotransistors). We describe the constructions and operating principles of tensotransistors, report theoretical calculation aimed to optimise the parameters of devices relative to higher sensitivity and energy consumption

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998