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Photoluminescent investigation of the effect of ultrasonic treatment upon defect states in M/n-n+ GaAs (M=Pt,W,Cr)

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5 Author(s)
Ermolovich, I.B. ; Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine ; Konakova, R.V. ; Milenin, V.V. ; Prokopenko, I.B.
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The effect of ultrasonic treatment on the physico-chemical, structural, and electrical properties of Pt,Cr,W/n-n+-GaAs structures has been studied. It is shown that ultrasonic treatment produces spatial and chemical ordering of the contact region of GaAs. This decreases the reverse currents in diode structures with a Schottky barrier. A possible mechanism of the effect of ultrasonic treatment on the structural and chemical reorganization in an M/n-n+-GaAs contact is discussed

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998