Referenced Items are not available for this document.
The N-AlGaAs/p-GaAs heterojunction with dc bias and small ac signal is investigated. It is shown that its complex small signal admittance consists of two contributions; the first one is the minority electron diffusion in quasineutral p-region region and the second one is the process of thermionic emission at the abrupt heterointerface
Published in:
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Date of Conference: 5-7 Oct 1998
- Page(s):
- 195 - 198
- Meeting Date :
- 05 Oct 1998-07 Oct 1998
- Print ISBN:
- 0-7803-4909-1
- INSPEC Accession Number:
- 6245080
- Conference Location :
- Smolenice Castle
- Digital Object Identifier :
- 10.1109/ASDAM.1998.730197
- Product Type:
- Conference Publications
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