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T-shaped gate based on poly Si/polyimide supported layers

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6 Author(s)
Lalinsky, T. ; Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia ; Hrkut, P. ; Matay, L. ; Kostic, I.
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A novel poly Si/polyimide dielectric bilayer system was designed to form a T-shaped gate on GaAs substrate using a two-step direct writing electron-beam lithography in combination with a selective reactive ion etching technique. Excellent breakdown properties and thermal stability of the supported polyimide layer were found also to be used for passivation of GaAs based T-shaped gate HFETs

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998