By Topic

Al-DyxOy-n-InP (100) structure preparation and properties

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
N. V. Babushkina ; Inst. of Electron., Acad. of Sci., Minsk, Byelorussia ; S. A. Malyshev ; L. I. Romanova

Al-DyxOy-n-InP structures with dysprosium oxide film prepared by two different methods have been studied. The Dy xOy films with 40-120 nm thickness have obtained by Dy thermal evaporation in the O2 environment (I) or in the vacuum (II) followed by thermal oxidation at 330-350°C in a dry oxygen stream. It follows for analysis of the experiments that the breakdown field in the Al-DyxOy(I)-n-InP structure Ebr is 2.5×106 V/cm, the effective positive surface charge Qss is ~3×1011 cm-2 and the surface state density Nit is 5×1011 cm-2 eV-1. The C-V characteristics hysteresis is of injection type with the magnitude less than 0.3 V. The Al-DyxOy (II)-n-InP structure has surface charge magnitude Qss about ±1×1011 cm-2 surface state density Nit~1×10 11 cm-2 eV-1, ionic type hysteresis 1-3 V and Ebr~5×106

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998