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SIMS characterization of fluorinated SiO2 films

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3 Author(s)
Efremov, A.A. ; Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine ; Romanova, G.P. ; Litovchenko, V.G.

SIMS depth profiling of two type of fluorinated SiO film before and after γ-irradiation have been performed. Analysis of the experimental data based on previous calibration and theoretical studies allow us to reveal correlation between distribution of bounded fluorine and distribution of other native and induced defects in the oxide film. Comparison of SIMS data with the result of computer simulation of γ-irradiation induced processes in SiO2:F shows that florine may present in SiO2 both in “interstitial” form and may be included in such structural defects as ≡Si-F...-Si≡, ≡Si-F...O-Si≡, ≡Si-F...H-Si≡. Hypothesis about high mobility of fluorine itself, is not supported by calculations. On the contrary, the high mobility of hydrogen is very important in all studied processes. In particular, γ-irradiation leads to transfer of hydrogen from SiH complexes to SiOH ones

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998

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