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On the quantum interference transistor based on the electrostatic Aharonov-Bohm effect

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2 Author(s)
T. Figielski ; Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland ; T. Wosinski

Solid-state analogue of the electrostatic Aharonov-Bohn effect has been predicted for a long time. Basing on this effect, hypothetical designs of quantum interference transistor have been proposed but, surprisingly, they have never been realised in practice. We show that this failure is principal due to inherent instability of such devices against charge fluctuations

Published in:

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Date of Conference:

5-7 Oct 1998