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Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

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4 Author(s)
El-Hennawy, A. ; Fac. of Eng., Ain Shams Univ., Cairo, Egypt ; Hassan, K. ; Ramadan Abou El-Ela, A. ; Abd El-Hameed, H.

MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides new interesting one. If this nonstandard geometry is made dependent on the biasing condition, original behavior and new I-V characteristics are expected to be obtained. This paper presents a study and characterization of this new device and shows that it provides a voltage controlled negative resistance. It is seen to have many noticeable advantages over those devices which are already known. This new negative resistance find a wide areas of applications in communications, measurements and instrumentation. It can be used to build up a super selective tank circuits which can be entirely integrated using MOSFET technology

Published in:

Radio Science Conference, 1998. NRSC '98. Proceedings of the Fifteenth National

Date of Conference:

24-26 Feb 1998