Study and characterization of a new MOSFET voltage controlled negative resistance for super selective IC tank circuits

MOSFET transistors may be fabricated with a variety of gate geometries. The trapezoidal shape provides new interesting one. If this nonstandard geometry is made dependent on the biasing condition, original behavior and new I-V characteristics are expected to be obtained. This paper presents a study and characterization of this new device and shows that it provides a voltage controlled negative resistance. It is seen to have many noticeable advantages over those devices which are already known. This new negative resistance find a wide areas of applications in communications, measurements and instrumentation. It can be used to build up a super selective tank circuits which can be entirely integrated using MOSFET technology.