By Topic

Dielectric breakdown in F-doped SiO2 films formed by plasma-enhanced chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
H. Kato ; Dept. of Electr. & Electron. & Comput. Eng., Waseda Univ., Tokyo, Japan ; S. Sakai ; A. Takami ; Y. Ohki
more authors

Fluorine-doped thin silicon dioxide films were synthesized by plasma-enhanced chemical vapor deposition of tetraethoxysilane and CF 4, and the dielectric strength was measured with a self-healing breakdown technique by applying short duration voltage pulses. As a result, the film containing a higher amount of fluorine has a higher dielectric strength. The reason for this increase is discussed from various aspects, and two persuasive mechanisms are presented

Published in:

Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on

Date of Conference:

22-25 Jun 1998