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Anomalous dielectric dispersion in tantalum oxide films prepared by RF sputtering

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1 Author(s)
K. Miyairi ; Fac. of Eng., Shinshu Univ., Nagano, Japan

Dielectric properties (ε and tan δ) of thin sputtered tantalum oxide films have been measured in the low frequency range. Anomalous large values of ε and tan δ have been observed at high temperatures above 100°C. The explicit thickness dependence exists in the frequency dependence of ε and tan δ. These results have been interpreted by Maxwell-Wagner theory

Published in:

Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on

Date of Conference:

22-25 Jun 1998