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This paper examines the low-frequency noise properties of millimeter-wave GaAs and InP Schottky diodes. Measurements of diodes fabricated using both HEMT and HBT epitaxy will be presented. These noise measurements should enable the development of accurate models useful in the analysis and design of MMIC components.
Microwave Symposium Digest, 1998 IEEE MTT-S International (Volume:3 )
Date of Conference: 7-12 June 1998