By Topic

Improvements on a GaAs MESFET model for nonlinear RF simulations

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
F. Ellinger ; Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland ; J. Kucera ; W. Baechtold

A modified GaAs MESFET-model has been developed to improve accuracy over a large bias range, particularly within the linear region. The enhancements consist of a modified Statz equation for the gate charge to improve the modeling of the gate drain capacitance, and an equation for the bias dependent drain source resistance for exact modeling of the dispersive output conductance.

Published in:

Microwave Symposium Digest, 1998 IEEE MTT-S International  (Volume:3 )

Date of Conference:

7-12 June 1998