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In order to realize Gbit-scale DRAM in a small chip size, the NAND DRAM cell is a good candidate, however, open bit line (BL) arrangement and multiplexed sensing is necessary as used in a conventional NAND DRAM. We propose a novel PF-NAND cell which achieve the folded BL arrangement and non-multiplexed sensing. A new sense amplifier which is preferable for low voltage operated NAND DRAM is also developed. Furthermore, an SDRAM compatible interface is realized by introducing cache SRAM and wide-band I/O array architecture between the PF-NAND DRAM and cache SRAM.