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A 9 mW 900 MHz CMOS LNA with mesh arrayed MOSFETs

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4 Author(s)
G. Hayashi ; Corp. Semicond. Dev. Div., Matsuchita Electr. Ind. Co. Ltd., Osaka, Japan ; H. Kimura ; H. Simomura ; A. Matsuzawa

A 900 MHz Low Noise Amplifier (LNA) has been developed using 0.35 /spl mu/m standard CMOS technology. MA-MOS (Mesh-Arrayed MOSFET) is introduced for excellent high-frequency performance without salicide technology. The substrate power loss was analyzed and minimized by reducing parasitic elements for a low-noise and low-power operation. As a result, the LNA realized a minimum noise figure (NFmin) of 1.8 dB, a forward gain of 14.8 dB and IIP3 of -2.5 dBm with a low-power consumption of only 9 mW from a 3 V power supply.

Published in:

VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on

Date of Conference:

11-13 June 1998