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A /spl plusmn/30% capacitance modulation of a new variable capacitor has been achieved for a 2 V variation in the controlling bias voltage. The realized varactor is based on a polysilicon/oxide/n-well structure, implemented in a 0.35 /spl mu/m standard CMOS process. The quality factor for a 3.1 pF sample ranges from 17 to 33, at 1800 MHz.
Date of Conference: 11-13 June 1998