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Non-complimentary rewriting and serial-data coding scheme for shared-sense-amplifier open-bit-line DRAMs

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4 Author(s)
Utsugi, S. ; ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan ; Hanyu, M. ; Muramatsu, Y. ; Sugibayashi, T.

A non-complimentary rewriting scheme is proposed for open-bit-line DRAMs adopting shared-sub-sense amplifier. The scheme can theoretically cancel inter-bit-line coupling noise down to zero. In order to suppress the peak in word-line noise, a serial-data coding scheme was also developed. This scheme can reduce word-line noise to at least 50%. These two circuits were applied to an experimental 1 Gb DRAM using 0.22 /spl mu/m CMOS process technology for file applications.

Published in:

VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on

Date of Conference:

11-13 June 1998