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Evaluation of an extension of a nonlinear interface optical switch structure for dual mode switching

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3 Author(s)
Bussjager, R. ; Rome Lab., NY, USA ; Osman, J. ; Chaiken, J.

There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This effort reviews the nonlinear interface optical switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO3) and tungsten (V) oxide (W2O5) on the hypotenuse of glass (BK-7), fused silica (SiO2) and zinc selenide (ZnSe) right angle prisms. The extent to which the chemical state of the film can also be manipulated electrically, in a purely gas-solid context, is discussed. Temporal response, spatial density of packing the switches and clarifying considerations regarding choices of materials are also presented

Published in:

Aerospace Conference, 1998 IEEE  (Volume:5 )

Date of Conference:

21-28 Mar 1998