Evaluation of an extension of a nonlinear interface optical switch structure for dual mode switching

There is a need for devices which will allow integration of photonic/optical computing subsystems into electronic computing architectures. This effort reviews the nonlinear interface optical switch (NIOS) concept and then describes a new effect, the erasable optical memory (EOM) effect. We evaluate an extension of the NIOS device to allow simultaneous optical/electronic, i.e. dual mode, switching of light utilizing the EOM effect. Specific devices involve the fabrication of thin film tungsten (VI) oxide (WO/sub 3/) and tungsten (V) oxide (W/sub 2/O/sub 5/) on the hypotenuse of glass (BK-7), fused silica (SiO/sub 2/) and zinc selenide (ZnSe) right angle prisms. The extent to which the chemical state of the film can also be manipulated electrically, in a purely gas-solid context, is discussed. Temporal response, spatial density of packing the switches and clarifying considerations regarding choices of materials are also presented.