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GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 μm with 0.6-W diffraction-limited power

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6 Author(s)
H. K. Choi ; Lincoln Lab., MIT, Lexington, MA, USA ; J. N. Walpole ; G. W. Turner ; M. K. Conners
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Tapered lasers fabricated from a GaInAsSb-AlGaAsSb single-quantum-well structure are reported. The laser structure, grown by molecular beam epitaxy, has broad-stripe pulsed threshold current densities as low as 50 A/cm/sup 2/ at room temperature. Tapered lasers have exhibited diffraction-limited continuous-wave output power up to 600 mW.

Published in:

IEEE Photonics Technology Letters  (Volume:10 ,  Issue: 7 )