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1.52-1.59-μm range different-wavelength modulator-integrated DFB-LDs fabricated on a single wafer

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5 Author(s)
Kudo, K. ; Optoelectron. & High-Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan ; Ishizaka, M. ; Sasaki, T. ; Yamazaki, H.
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We report for the first time different-wavelength modulator-integrated distributed-feedback laser diodes (DFB/MODs) fabricated on a single wafer, whose lasing wavelength cover almost all of the expanded erbium-doped fiber amplifier (EDFA) gain band from 1.527 to 1.593 μm. The devices provided uniform and high-performance characteristics such as a threshold current less than 12 mA and successful transmission of 2.5 Gb/s-600 km through a normal fiber.

Published in:

Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 7 )