Referenced Items are not available for this document.
Summary form only given.To study the effects of high densities of excess free carriers on the optical transitions near the band edge of wurtzite GaN, nondegenerate nanosecond optical pump-probe transmission and reflection experiments have been performed on GaN thin films grown by metallo-organic chemical-vapor deposition (MOCVD) on (0001)-oriented sapphire. The large magnitude of the optical nonlinearities observed in our work suggests the possibility of new optoelectronic applications.
Published in:
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Date of Conference: 8-8 May 1998
- Page(s):
- 240 - 241
- Meeting Date :
- 03 May 1998-08 May 1998
- Print ISBN:
- 1-55752-541-2
- INSPEC Accession Number:
- 6225584
- Conference Location :
- San Francisco, CA, USA
- Digital Object Identifier :
- 10.1109/IQEC.1998.680499
- Product Type:
- Conference Publications
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