Summary form only given. We discuss recent progress in two single-photonic devices: a single-photon turnstile device and a solid-state photomultiplier. A single photon turnstile device is based on the simultaneous Coulomb-blockade effect for electrons and holes in a mesoscopic, double barrier, pn-tunnel junction. By periodically modulating the bias voltage between the electron and hole resonant tunneling conditions, we can periodically inject a single electron and a single hole into the central island, which will be followed by single-photon emission. A double-barrier GaAs-AlGaAs pn-tunnel junction wafer is grown by molecular beam epitaxy.
Published in:
Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International
Date of Conference: 8-8 May 1998