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Carrier transport in a single GaAs quantum wire structure studied by time-resolved near-field spectroscopy

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7 Author(s)
Richter, A. ; Max-Born-Inst. fur Nichtlineare Opt. & Kurzzeitspektroskopie, Berlin, Germany ; Suptitz, M. ; Lienau, C. ; Elsaesser, T.
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Summary form only given.Direct studies of the transport of photogenerated electron-hole pairs in semiconductor nanostructures require both high spatial and temporal resolution. Near-field scanning optical microscopy (NSOM), offering subwavelength spatial resolution in the 100-nm range in combination with time-resolved detection schemes is a particularly promising technique for such experiments. Here we report on the first time-resolved near-field spectroscopic investigation of the carrier dynamics in single gallium arsenide (GaAs)/(AlGa)As sidewall quantum wires.

Published in:

Quantum Electronics Conference, 1998. IQEC 98. Technical Digest. Summaries of papers presented at the International

Date of Conference:

8-8 May 1998