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Electron-molecule collisions in semiconductor processing plasmas

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3 Author(s)
McKoy, V. ; Arthur Amos Noyes Lab. of Chem. Phys., California Inst. of Technol., Pasadena, CA, USA ; Winstead, C. ; Chuo-Han Lee

Summary form only given. We will review the progress we have made in exploiting large parallel computers to generate electron collision cross sections for gases of interest to the semiconductor industry. Following an overview of the method employed in these calculations and its computational demands, we will discuss the strategies used to parallelize the compute-intensive steps of these calculations. Results of applications to a few gases used in semiconductor fabrication will then be presented.

Published in:

Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on

Date of Conference:

1-4 June 1998