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High reliability of GaInP/GaInAs 980-nm window laser

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5 Author(s)
Ikoma, N. ; Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan ; Hashimoto, J. ; Murata, M. ; Katsuyama, T.
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Summary form only given. We fabricated a GaInP-GaInAs 980-nm window laser using selective nitrogen ion implantation and subsequent anneal process. The results of the aging test of the lasers indicate very high reliability of 600000 h median life under 150-mW operation at 250C.

Published in:

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Date of Conference:

3-8 May 1998

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