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Aluminum Nitride nano-plate infrared sensor with self-sustained CMOS oscillator for nano-watts range power detection

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2 Author(s)
Yu Hui ; Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA ; Rinaldi, M.

This paper presents, for the first time, a fast (thermal time constant of 1.3 ms) and sensitive (responsivity of 310 Hz/μW) Infrared detector consisting of an Aluminum Nitride (AlN) nano-plate resonator (NPR) connected to a compact and low power CMOS self-sustained oscillator (fabricated in the AMIS 0.5 μm CMOS process) as a direct frequency readout. A high performance (quality factor Q = 1283 and electromechanical coupling coefficient kt2 = 1.56%) MEMS resonant structure based on a thin AlN (250 nm thick) NPR coated with Si3N4 (100 nm thick) as IR absorber was fabricated and tested, showing a measured temperature coefficient of frequency (TCF) of -35 ppm/K and FEM simulated temperature rise factor of 72.5 mK/μW. Thanks to the high electromechanical performance of the MEMS resonator, a compact and low power (2.3 mW) self-sustained CMOS oscillator circuit was used as a direct frequency readout, enabling the demonstration of a novel uncooled IR detector with a low Noise Equivalent Power (NEP) of 3.5 nW/Hz1/2.

Published in:

European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC), 2013 Joint

Date of Conference:

21-25 July 2013