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Browse Journals & Magazines > Photonics Technology Letters, ...> Volume:10 Issue:4 Help

Single-mode AlGaAs-GaAs lasers using lateral confinement by native-oxide layers

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4 Author(s)
Heerlein, J. ; Dept. of Optoelectron., Ulm Univ., Germany ; Grabherr, M. ; Jager, R. ; Unger, P.

We report on results of wet oxidized narrow-stripe QW laser diodes operating in single lateral and longitudinal mode around an emission wavelength of 850 nm. Devices with an active width of 4-10 /spl mu/m achieved output powers of up to 240 mW in continuous-wave (CW) operation at room temperature.

Published in:
Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 4 )

Date of Publication: April 1998

Page(s):
498 - 500
ISSN :
1041-1135
INSPEC Accession Number:
5887252
Digital Object Identifier :
10.1109/68.662573
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
April 1998
Sponsored by :
IEEE Photonics Society

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