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1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer

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5 Author(s)
Takemasa, K. ; Res. & Dev. Group, Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; Munakata, T. ; Kobayashi, M. ; Wada, H.
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1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well (MQW) lasers with a p-AlInAs electron stopper layer have been fabricated. The electron stopper layer was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum operating temperature of 155/spl deg/C was achieved, which was 20/spl deg/C higher than that without the stopper layer.

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Photonics Technology Letters, IEEE  (Volume:10 ,  Issue: 4 )