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CMOS interface circuitry for a low-voltage micromachined tunneling accelerometer

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2 Author(s)
Chingwen Yeh ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; Najafi, K.

This paper describes the design and development of three types of complementary metal-oxide-semiconductor (CMOS) interface circuitry for low-voltage micromachined tunneling accelerometers. Using a simple inductance-capacitance-resistance (LCR) circuit as well as two nonlinear current/voltage-controlled current sources, an electromechanical model enables simulating and predicting the performance of the accelerometer with CMOS interface circuitry. Of the three types of interface circuitry, the one utilizing a pn-junction diode as a logarithmic current-to-voltage converter has the best performance. The hybrid sensor-circuit module can be incorporated into a portable battery-operated multisensor instrumentation microsystem. Only one 12-V power supply is required for device operation with a power dissipation of 2.5 mW. The accelerometer has a sensitivity of 125 mV/g and bandwidth of 2.5 kHz with a measurement range of 30 g. The noise spectral density with a 1/f behavior drops from 4 mg/√(Hz) (at 0.5 Hz) to 0.1 mg/√(Hz) (at 2.5 kHz). The accelerometer in turn provides a dynamic range over 71 dB with a minimum detectable acceleration of 8 mg in a bandwidth of 2.5 kHz. In continuous operation over 720 h, the long-term variations of the output offset voltage and device sensitivity are ±10 mV (0.12%) and ±0.2 mV/g (0.15%), respectively

Published in:

Microelectromechanical Systems, Journal of  (Volume:7 ,  Issue: 1 )