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A DC method for measuring all the gate capacitors in MOS devices with atto-farad resolution

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2 Author(s)
T. Manku ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; L. MacEachern

In this paper we present a new methodology for measuring all the intrinsic gate capacitors (i.e., gate-source, gate-drain, and gate-bulk) in a MOS device using a DC measurement scheme. The structure consists of two matched MOSFET's, one of which has a reference capacitor attached to its gate. The test structure was fabricated and the results show a resolution in the atto-farads range. The test structures use charge coupling to measure the gate capacitors

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:11 ,  Issue: 1 )