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Material interactions of solder bumps produced with fluxless wave soldering

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2 Author(s)
Lin, Kwang-Lung ; Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Wen-Hsiuan Chao

A fluxless wave soldering process was attempted for producing solder bumps of 100 μm×100 μm, on silicon wafers containing 8×8 chips with 20×20 bumps on each chip. The solder bump structure, Al/Mo,(Mo-N)/Pd/Pb-Sn, was produced by fluxless wave soldering. The sputtering deposited Mo or MoN film was applied as a diffusion barrier between Al and solder. The Pd layer, also produced by sputtering deposition, was applied for wetting purposes. Interactions between materials during wave soldering and subsequent heat treatment of this structure were investigated. The interactions, investigated using SEM and XRD, within the multilayers occured rapidly between Pd and solder elements during wave soldering

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Components, Packaging, and Manufacturing Technology, Part B: Advanced Packaging, IEEE Transactions on  (Volume:21 ,  Issue: 1 )