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An isolated-open pattern to de-embed pad parasitics [CMOSFETs]

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4 Author(s)
Chung-Hwan Kim ; Semicond. Div., Electron. & Telecommun. Res. Inst., Taejon, South Korea ; Kim, Cheon Soo ; Hyun Kyu Yu ; Nam, Kee Soo

To meet radio frequency (RF) performance required in large market of wireless applications, CMOS transistors having a small unit gate width are preferred. To correctly estimate RF performance, parasitics of the on-wafer pads and interconnection metal lines should be de-embedded as in the advanced bipolar transistors. However, cutoff frequencies of small-size MOSFETs de-embedded by the conventional on-wafer dummy structures result in large overestimation. A new open pattern is proposed to solve the problem. The meaning and justification of the new de-embedding pattern are discussed

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:8 ,  Issue: 2 )

Date of Publication:

Feb 1998

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