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A thick film semiconductor NOx detector

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4 Author(s)
Telipan, G. ; R&D Inst. for Electr. Eng., Bucharest, Romania ; Bodea, E. ; Petrescu, C. ; Motataianu, M.

The paper presents a NOx detector made by thick film technology. The two plated electrodes using a conductive Pd-Ag ink were deposited on one side of the alumina substrate. A thick-film heater material is pasted on the other side of the substrate the sensitive film, was produced, by a TiO2-Al2O3 resistive ink. The device electrical resistance decrease from 200 KΩ in pure air to 36 KΩ in a 2000 ppm NOx atmosphere for a working temperature of 450°C

Published in:

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International  (Volume:2 )

Date of Conference:

7-11 Oct 1997

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