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Lateral bipolar magnetotransistors with enhanced emitter injection modulation and carrier deflection

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3 Author(s)
Avram, M. ; Nat. Inst. of Res. & Dev. for Microtechnol., Bucharest, Romania ; Neagoe, O. ; Lipan, T.

Two types of integrated magnetotransistors based on enhanced modulation of emitter injection and carrier deflection are presented. The absolute magnetosensitivity of the devices is about 1 to 5 mV/mT. The relative magnetosensitivity is in the range 1-5 T-1 at collector currents of the order of 0.5 mA. Between the magnetic field and the output signal exists a linear dependence for certain biasing conditions

Published in:

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International  (Volume:2 )

Date of Conference:

7-11 Oct 1997